Hexagonal boron nitride: a review of the emerging material platform for single-photon sources and the spin–photon interface

• Stefania Castelletto,
• Faraz A. Inam,
• Shin-ichiro Sato and
• Alberto Boretti

Beilstein J. Nanotechnol. 2020, 11, 740–769, doi:10.3762/bjnano.11.61

• divacancy (DV) in silicon carbide (SiC) [18][19][20], the silicon monovacancy in SiC [21][22][23], the carbon antisite vacancy pair in SiC [24][25], the silicon vacancy and nitrogen (N) atom on an adjacent carbon site in SiC [26][27][28], and rare-earth impurities in complex oxides [29]. While the NV center

Deterministic placement of ultra-bright near-infrared color centers in arrays of silicon carbide micropillars

• Stefania Castelletto,
• Abdul Salam Al Atem,
• Faraz Ahmed Inam,
• Hans Jürgen von Bardeleben,
• Sophie Hameau,
• Ahmed Fahad Almutairi,
• Gérard Guillot,
• Shin-ichiro Sato,
• Alberto Boretti and
• Jean Marie Bluet

Beilstein J. Nanotechnol. 2019, 10, 2383–2395, doi:10.3762/bjnano.10.229

• ; Introduction Silicon carbide (SiC) is an established material for many electronic devices and has also been considered for photonics applications recently. After the improvement of the purity of the material and the isolation of point defects (primarily vacancies), SiC has been considered to host physical

High-temperature resistive gas sensors based on ZnO/SiC nanocomposites

• Vadim B. Platonov,
• Marina N. Rumyantseva,
• Alexander S. Frolov,
• Alexey D. Yapryntsev and
• Alexander M. Gaskov

Beilstein J. Nanotechnol. 2019, 10, 1537–1547, doi:10.3762/bjnano.10.151

• dispersed silicon carbide (SiC). In this work, ZnO and SiC nanofibers were synthesized by electrospinning of polymer solutions followed by heat treatment, which is necessary for polymer removal and crystallization of semiconductor materials. ZnO/SiC nanocomposites (15–45 mol % SiC) were obtained by mixing

• composite nanomaterials using highly dispersed silicon carbide (SiC). The unique physical and chemical properties of silicon carbide – wide band gap (Eg = 2.4–3.2 eV), high Debye temperature 1400 K, high thermal conductivity of 4.9 W/cm·K, low reactivity to oxygen and water vapor – ensure the stability of

• its surface, which was confirmed by XPS. In turn, this determines an increase in the activation energy of conductivity and causes an increase in the sensor response of ZnO/SiC nanocomposites compared with ZnO nanofibers. Experimental Materials synthesis Nanocrystalline silicon carbide, SiC, and zinc

Hydrothermal-derived carbon as a stabilizing matrix for improved cycling performance of silicon-based anodes for lithium-ion full cells

• Mirco Ruttert,
• Florian Holtstiege,
• Jessica Hüsker,
• Markus Börner,
• Martin Winter and
• Tobias Placke

Beilstein J. Nanotechnol. 2018, 9, 2381–2395, doi:10.3762/bjnano.9.223

• porous, amorphous structure that is able to accommodate the volumetric changes of the Si during the lithiation/delithiation process. The formation of silicon carbide (SiC) or any other crystalline SiOx phases in detectable amounts is also avoided at this temperature as can be reasoned from the absence of

Review: Electrostatically actuated nanobeam-based nanoelectromechanical switches – materials solutions and operational conditions

• Liga Jasulaneca,
• Jelena Kosmaca,
• Raimonds Meija,
• Jana Andzane and
• Donats Erts

Beilstein J. Nanotechnol. 2018, 9, 271–300, doi:10.3762/bjnano.9.29

• contact when switching to the on state [70]. Silicon carbide: Silicon carbide (SiC), well-known for its resistance to corrosion, has been widely explored for harsh environment applications where traditional semiconductor materials fail. In addition, it has tribological characteristics superior to those of

Hierarchically structured nanoporous carbon tubes for high pressure carbon dioxide adsorption

• Julia Patzsch,
• Deepu J. Babu and
• Jörg J. Schneider

Beilstein J. Nanotechnol. 2017, 8, 1135–1144, doi:10.3762/bjnano.8.115

• heated up to 1600 °C for 1 h under vacuum. The resulting material was treated with HF solution, followed by calcination at 750 °C for 4 h under air and etched with HF solution a second time to obtain the pure silicon carbide (SiC) tubes (5). The SiC tubes were finally washed with water and dried at 80 °C

Monolayer graphene/SiC Schottky barrier diodes with improved barrier height uniformity as a sensing platform for the detection of heavy metals

• Ivan Shtepliuk,
• Jens Eriksson,
• Volodymyr Khranovskyy,
• Tihomir Iakimov,
• Anita Lloyd Spetz and
• Rositsa Yakimova

Beilstein J. Nanotechnol. 2016, 7, 1800–1814, doi:10.3762/bjnano.7.173

• characteristics of the devices and their sensitivity. A simpler solution is to use Schottky diode sensors, which can be grown more easily, have no gate insulator and a high sensitivity in the reverse and forward diode regimes. During the last decade the thermal decomposition of silicon carbide (SiC) in argon

Synthesis and applications of carbon nanomaterials for energy generation and storage

• Marco Notarianni,
• Jinzhang Liu,
• Kristy Vernon and
• Nunzio Motta

Beilstein J. Nanotechnol. 2016, 7, 149–196, doi:10.3762/bjnano.7.17

• silicon carbide (SiC) has also been extensively explored as it results in wafer-scale growth. Additionally, SiC is an excellent substrate for many electronics applications, avoiding the need to transfer to another substrate. High-quality graphene with a controlled thickness and a specific crystallographic

Large area scanning probe microscope in ultra-high vacuum demonstrated for electrostatic force measurements on high-voltage devices

• Urs Gysin,
• Thilo Glatzel,
• Thomas Schmölzer,
• Adolf Schöner,
• Sergey Reshanov,
• Holger Bartolf and
• Ernst Meyer

Beilstein J. Nanotechnol. 2015, 6, 2485–2497, doi:10.3762/bjnano.6.258

• the benefit of surface photo voltage measurements, we analysed the contact potential difference of a silicon carbide p/n-junction under illumination. Keywords: copper alloy; electrostatic force microscopy; high-voltage device; Kelvin probe force microscopy; silicon carbide (SiC); surface photo

• remove the oxide layer. Second, two different silicon carbide (SiC) devices are analysed and discussed. A calibration layer structure containing precisely defined p/n-interfaces is used to elaborate the challenges associated to KPFM and SPV measurements on semiconducting surfaces. Furthermore, a complex

Graphene on SiC(0001) inspected by dynamic atomic force microscopy at room temperature

• Mykola Telychko,
• Jan Berger,
• Zsolt Majzik,
• Pavel Jelínek and
• Martin Švec

Beilstein J. Nanotechnol. 2015, 6, 901–906, doi:10.3762/bjnano.6.93

• hinders applications of epitaxial graphene in the nanoelectronics [1]. The two main methods of epitaxial graphene growth are chemical vapor deposition (CVD) on metal surfaces [2] and annealing of silicon carbide (SiC) [3]. The large conductivity of metal substrates leaves graphene on metals as model-only

Low-cost formation of bulk and localized polymer-derived carbon nanodomains from polydimethylsiloxane

• Juan Carlos Castro Alcántara,
• Mariana Cerda Zorrilla,
• Lucia Cabriales,
• Luis Manuel León Rossano and
• Mathieu Hautefeuille

Beilstein J. Nanotechnol. 2015, 6, 744–748, doi:10.3762/bjnano.6.76

• may then be obtained according to the desired application and nanodomains such as carbon nanotubes and nanowires, silicon carbide (SiC) and SiC/SiO2 nanofibres have also been recently produced [2][3]. Typically, the use of special fillers and high temperatures of 1000 °C or greater are critical for

Materials and characterization techniques for high-temperature polymer electrolyte membrane fuel cells

• Roswitha Zeis

Beilstein J. Nanotechnol. 2015, 6, 68–83, doi:10.3762/bjnano.6.8

• based on phosphoric-acid-doped polybenzimidazole membranes shares many common features with the classical phosphoric acid fuel cell (PAFC), which also utilizes phosphoric acid as the electrolyte. Unlike the electrolyte system used in a PAFC, silicon carbide (SiC) soaked in acid, the acid-doped PBI

Formation of SiC nanoparticles in an atmospheric microwave plasma

• Martin Vennekamp,
• Ingolf Bauer,
• Matthias Groh,
• Evgeni Sperling,
• Susanne Ueberlein,
• Maksym Myndyk,
• Gerrit Mäder and
• Stefan Kaskel

Beilstein J. Nanotechnol. 2011, 2, 665–673, doi:10.3762/bjnano.2.71

• size is mainly influenced by the concentration of the precursor material in the plasma. Keywords: atmospheric microwave plasma; nanoparticle; SiC; Introduction Silicon Carbide (SiC) is a solid with various applications in materials science. It is used, e.g., as a wear-resistant material, as a